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FDC6506P-VB Datasheet
Datasheet specifications
| Datasheet's name | FDC6506P-VB |
|---|---|
| File size | 77.044 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet FDC6506P-VB |
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Other documentations
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Technical specifications
- RoHS: true
- Type: 2 P-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec FDC6506P-VB
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 4A
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@4.5V,4A
- Package: TSOP-6-1.5mm
- Manufacturer: VBsemi Elec